Spectroscopic gas analyzers based on indium-phosphide, antimonide and lead-salt diode-lasers - ScienceDirect
Epitaxial growth of InP to bury directly bonded thin active layer on SiO2 /Si substrate for fabricating distributed feedback lasers on silicon - Fujii - 2015 - IET Optoelectronics - Wiley Online Library
Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si